Solid-state imaging device, method of driving same, and camera apparatus

ABSTRACT

A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state imaging device, a methodof driving the solid-state imaging device, and a camera apparatus. Moreparticularly, the present invention relates to an X-Y address typesolid-state imaging device typified by a MOS-type solid-state imagingdevice, a method of driving the solid-state imaging device, and a cameraapparatus (image-capturing apparatus) that uses the solid-state imagingdevice as an image-capturing device.

2. Description of the Related Art

In an X-Y address type solid-state imaging device, for example, aMOS-type solid-state imaging device, in order to microfabricate unitpixels, a selection transistor for selecting a pixel is omitted, and apixel is selected by controlling the electrical potential of a floatingdiffusion section (hereinafter referred to as an “FD section”) by aresetting transistor for resetting the FD section, so that the unitpixel is realized by three transistors (see, for example, JapaneseUnexamined Patent Application Publication No. 2002-51263, in particular,paragraph numbers 0010 to 0012, and FIG. 1).

The configuration of a pixel circuit of three transistors is shown inFIG. 15. As can be seen from FIG. 15, a unit pixel 100 includes anoptoelectric transducer (here, photodiode) 101, a transfer transistor102, an amplifier transistor 103, and a resetting transistor 104. Alarge number of unit pixels 100 are arranged two-dimensionally in amatrix on a semiconductor substrate.

As is clear from the above-described configuration, in the pixel circuitof three transistors, a selection transistor does not exist, and thepixel is selected by controlling the electrical potential of an FDsection 105 by the resetting transistor 104. That is, for anon-selection pixel, the electrical potential of the FD section 105 isbrought into a low level (hereinafter referred to as an ““L” level”),and for a selection pixel, the electrical potential of the FD section105 is brought into a high level (hereinafter referred to as an ““H”level”), thereby outputting a signal of the selection pixel to avertical signal line 107. Thereafter, by returning the electricalpotential of the FD section 105 of the selection pixel to an “L” level,the pixel is returned to a non-selection state. This operation isperformed simultaneously on pixels for one line.

In the pixel circuit of three transistors of the above-describedconfiguration, the drain side of an amplifier transistor 103 is simplyconnected to power-supply wiring, and the drain side of the resettingtransistor 104 is connected to drain wiring 108 which extends in the rowdirection (horizontal direction). In comparison, as shown in FIG. 16, asa result of adopting a configuration in which the drain side of theamplifier transistor 103 and the drain side of the resetting transistor104 are connected commonly to the drain wiring, a contact, a diffusionlayer, and wiring in the unit pixel 100 can be reduced. Thus, this isadvantageous when the unit pixel 100 is formed more finely.

Although the drain wiring is not shown in FIG. 16, similarly to the caseof FIG. 15, in the case of drain wiring extending in the row direction,the number of wirings extending in the row direction is three, and thenumber of wirings extending in the column direction (vertical direction)is one. As a result, it is difficult to form an opening for receivingincident light into the pixel, into a shape close to a square.Furthermore, since the electrical current of all the vertical signallines 107 is supplied from one drain wiring, and large electricalcurrent flows through the drain wiring, wiring resistance and wiringreliability become problems. These problems can be avoided by formingthe drain wiring as wiring in the vertical direction or in a latticeform.

A description will now be given of a case in which the solid-stateimaging device of the pixel configuration of FIG. 16 is driven. In theperiod other than the pixel reading (non-reading period), there arecases in which the drain wiring is brought into an “H” level and an “L”level. When the drain wiring is brought into an “L” level, there is aproblem in that electrons leak from the drain wiring to the optoelectrictransducer 101 via the resetting transistor 104 and the transfertransistor 102. Therefore, in the period other than the pixel reading, adriving method in which the drain wiring is brought into an “H” level isoften adopted.

As described above, in a case where a driving method in which the drainwiring is brought into an “H” level in a period other than pixel readingis adopted, the timing relationship among the driving pulses, that is, adrain voltage DRN, a reset pulse RST, and a transfer pulse TRF, of theselection row in the pixel reading period, is shown in FIG. 17. In thetiming chart of FIG. 17, a time t101 indicates a timing at which a resetlevel is received, and a time t102 indicates a timing at which a signallevel is received.

In the non-selection row, the drain voltage DRN is provided in common,but the reset pulse RST and the transfer pulse TRF are not provided. Thedrain voltage DRN is usually placed at an “H” level (power-supplyvoltage). The electrical potential of the FD section 105 is at an “L”level for all the rows. When the reset pulse RST is provided to theselection row, the resetting transistor 104 is turned on, causing theelectrical potential of the FD section 105 of the selection row to beplaced at an “H” level. Consequently, the level when the selection rowis reset, that is, the reset level, is output to the vertical signalline 107 through the amplifier transistor 103. This reset level isreceived at the circuit at the next stage.

Next, when the transfer pulse TRF is provided, the transfer transistor102 is turned on, causing photoelectrons to be transferred from theoptoelectric transducer 101 to the FD section 105 of the selection row.Then, the level of the FD section 105, which corresponds to thephotoelectrons, that is, the signal level, is output to the verticalsignal line 107 through the amplifier transistor 103. This signal levelis received at the circuit at the next stage.

Thereafter, the drain wiring is placed at 0 V, and after the FD section105 of the selection row is returned to the “L” level by providing thereset pulse RST, the drain wiring is returned to the “H” level(hereinafter referred to as a “backfilling operation”). A series ofperiods in which a pixel is made to operate in this manner is hereinreferred to as a reading period. In this reading period, by calculatingthe difference between the reset level and the signal level at thecircuit at the next stage, a signal (pixel signal) corresponding to theamount of light photoreceived by the optoelectric transducer 101 can beobtained.

The inventors of the present invention test-produced a solid-stateimaging device of the pixel configuration of FIG. 2. Then, the inventorsdiscovered that, in this type of solid-state imaging device, a lot ofpixels with more dark current appear on a captured image. Furthermore,by analyzing this phenomenon, the inventors clarified that a large partof the above phenomenon can be described as described below.

A bias current flows through the vertical signal line 107 in aparticular period even other than the pixel reading period. FIG. 4 is anillustration thereof. In, FIG. 4, the horizontal ineffective period ismainly a period in which the pixel is made to operate so that the signalis received at the circuit of the next stage. The horizontal effectiveperiod is mainly a period in which the pixel signals are output insequence from the circuit of the next stage.

In order to read a pixel of a particular row, a bias current needs to bemade to flow. In FIG. 4, the n-th row reading-period is theabove-described reading period for the n-th row. Periods A and B areperiods in which a bias current flows in a state in which any row is notread before and after that reading period. After the pixel signal of then-th row is read into the circuit at the next stage, the supply of thebias current is shut off. Thereafter, after passing through a horizontaleffective period in which signals for one line are output in sequencefrom the circuit of the next stage, the reading of the next row isperformed similarly.

Here, in the periods A and B, any row is not in a reading state. At thistime, due to the relationship of variations of the threshold values ofthe amplifier transistor 103 and the resetting transistor 104, the biascurrent flows to a pixel having the lowest channel voltage of theamplifier transistor 103 (hereinafter referred to as a “low channelpixel”) among a large number of pixels connected to the vertical signalline 107. In this connection, in the amplifier transistor 103 and theresetting transistor 104, since the threshold values are lowered toensure an operation margin, a pixel for which electrical current cannotbe shut off completely exists with respect to at least the variations.

An example of the distribution of low channel pixels of each column inthe pixel section is shown in FIG. 18. In the periods A and B,electrical current flows through these low channel pixels. The potentialof the amplifier transistor 103 of the pixel is shown in FIG. 19. Thegate potential of the amplifier transistor 103 is at an “L” level. Atthis time, electrons flow into the drain wiring from the vertical signalline 107, and since the gate potential of the amplifier transistor 103is at an “L” level, the potential difference at the drain end is large,and a high electric-field is applied.

When the electrons flow at this large potential difference, theelectrons acquire large energy (these electrons are generally called“hot carriers”), part thereof is emitted to a P well, and photons aregenerated. The electrons and the photons jump into the optoelectrictransducer 101 nearby, and dark current is formed. That is, the darkcurrent of the pixel corresponding to FIG. 18 is large, and the darkcurrent is displayed as a white point on the image-capturing plane. Inpractice, a column in which a plurality of white points appear and acolumn in which there is no conspicuous white point exist depending onthe distribution of variations and the state of the interface.

Reading of pixels is performed on all the rows while being scanned insequence for each row. In the periods A and B, the foregoing occurs inthe low channel pixels of each column with respect to each of the rows.Consequently, the dark current of the low channel pixel becomesparticularly large. That is, for the low channel pixel, since thisphenomenon occurs when the pixel itself is not a selection row, the darkcurrent becomes large. The white point which occurs due to the abovereasons is hereinafter referred to as a “non-selection hot carrier whitepoint”).

In the pixel of the type in which the selection transistor is connectedin series to the amplifier transistor 103, since the supply of theelectrical current is completely shut off by that selection transistoralso in the periods A and B, the problem of the non-selection hotcarrier white point does not occur. In other words, the problem of thenon-selection hot carrier white point is specific to the solid-stateimaging device of the three-transistor-type pixel configuration havingno selection transistor.

SUMMARY OF THE INVENTION

Accordingly, an object of the present invention is to provide asolid-state imaging device in which a non-selection hot carrier whitepoint can be eliminated when a three-transistor-type pixel configurationhaving no selection transistor is adopted, a method of driving thesolid-state imaging device, and a camera apparatus.

In a first aspect, the present invention provides a solid-state imagingdevice including: a pixel section formed in such a manner that a unitpixel having three transistors of a transfer transistor for transferringa signal of an optoelectric transducer to a floating diffusion section,an amplifier transistor for outputting a signal of the floatingdiffusion section to a signal line, and a resetting transistor forresetting the amplifier transistor and the floating diffusion section isarranged; and driving means for selecting each pixel of the pixelsection by controlling the voltages of the drain and the gate of theresetting transistor and for causing a bias current supplied to thesignal line to flow to a pixel associated with an immediately previousselection pixel during a non-reading period of pixels.

In a second aspect, the present invention provides a solid-state imagingdevice including: a pixel section formed in such a manner that a unitpixel having three transistors of a transfer transistor for transferringa signal of an optoelectric transducer to a floating diffusion section,an amplifier transistor for outputting a signal of the floatingdiffusion section to a signal line, and a resetting transistor forresetting the amplifier transistor and the floating diffusion section isarranged; driving means for selecting each pixel of the pixel section bycontrolling the voltages of the drain and the gate of the resettingtransistor; and means for causing a bias current supplied to the signalline to flow to other than each pixel of the pixel section during thenon-reading period of pixels.

In a third aspect, the present invention provides a solid-state imagingdevice including: a pixel section formed in such a manner that a unitpixel having three transistors of a transfer transistor for transferringa signal of an optoelectric transducer to a floating diffusion section,an amplifier transistor for outputting a signal of the floatingdiffusion section to a signal line, and a resetting transistor forresetting the amplifier transistor and the floating diffusion section isarranged; a bias current source for supplying a bias current to eachpixel through the signal line; driving means for selecting each pixel ofthe pixel section by controlling the voltages of the drain and the gateof the resetting transistor; and means for shutting off the supply ofthe bias current to the signal line during the non-reading period ofpixels.

In a fourth aspect, the present invention provides a solid-state imagingdevice including: a pixel section formed in such a manner that a unitpixel having three transistors of a transfer transistor for transferringa signal of an optoelectric transducer to a floating diffusion section,an amplifier transistor for outputting a signal of the floatingdiffusion section to a signal line, and a resetting transistor forresetting the amplifier transistor and the floating diffusion section isarranged; and driving means for selecting each pixel of the pixelsection by controlling the voltages of the drain and the gate of theresetting transistor and for making the drain voltage of the resettingtransistor to be an intermediate voltage between the power-supplyvoltage level and the ground level during the non-reading period ofpixels.

In a fifth aspect, the present invention provides a solid-state imagingdevice including: a pixel section formed in such a manner that a unitpixel having three transistors of a transfer transistor for transferringa signal of an optoelectric transducer to a floating diffusion section,an amplifier transistor for outputting a signal of the floatingdiffusion section to a signal line, and a resetting transistor forresetting the amplifier transistor and the floating diffusion section isarranged; and driving means for selecting each pixel of the pixelsection by controlling the voltages of the drain and the gate of theresetting transistor and for providing a resetting pulse whose voltagevalue on the high level side is higher than the voltage value of thepower-supply voltage, to the gate of the resetting transistor.

In a sixth aspect, the present invention provides a solid-state imagingdevice including: a plurality of pixels arranged within an imaging area,wherein the pixels include an optoelectric transducer, an amplifiertransistor, to whose gate a charge signal from the optoelectrictransducer is supplied, and a resetting transistor for resetting thecharge from the optoelectric transducer, in a reading period, after thegate potential of the amplifier transistor is changed to a predeterminedlevel, the amplifier transistor amplifies and outputs the charge signalfrom the optoelectric transducer, and in the reading period and in thenon-reading period immediately thereafter, the gate of the amplifiertransistor is not subjected to electrical potential adjustment.

In a seventh aspect, the present invention provides a solid-stateimaging device including: a plurality of pixels arranged within animaging area; a signal line for guiding a signal from the pixel tooutside the imaging area; an electrical current source for supplying abias current to the signal line; and switching means for changing theflow of the bias current. The solid-state imaging device according toeach aspect of the present invention is used as an image-capturingdevice in a camera apparatus (image-capturing apparatus).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing the overview of the configuration ofan X-Y address type solid-state imaging device;

FIG. 2 is a circuit diagram showing an example of a pixel circuit of aunit pixel;

FIG. 3 is a timing chart illustrating a method of driving a solid-stateimaging device according to a first embodiment of the present invention;

FIG. 4 is an illustration of the operation of the solid-state imagingdevice;

FIG. 5 is a potential diagram of an amplifier transistor when a methodof driving the solid-state imaging device according to the firstembodiment is adopted;

FIG. 6 is a timing chart when a depletion-type transistor is not used asa resetting transistor;

FIG. 7 is an illustration of the operation performed when two rows areread during one horizontal ineffective period;

FIG. 8 is a block diagram showing the configuration of the main part ofa solid-state imaging device according to a second embodiment of thepresent invention;

FIG. 9 is a timing chart illustrating a method of driving thesolid-state imaging device according to the second embodiment of thepresent invention;

FIG. 10 is a block diagram showing the configuration of the main part ofa solid-state imaging device according to a third embodiment of thepresent invention;

FIG. 11 is a timing chart illustrating a method of driving thesolid-state imaging device according to the third embodiment of thepresent invention;

FIG. 12 is a timing chart illustrating a method of driving a solid-stateimaging device according to a fourth embodiment of the presentinvention;

FIG. 13 is a timing chart illustrating a method of driving a solid-stateimaging device according to a fifth embodiment of the present invention;

FIG. 14 is a block diagram showing the overview of the configuration ofa camera apparatus according to the present invention;

FIG. 15 is a circuit diagram showing a first example of a pixel circuitof a three-transistor configuration;

FIG. 16 is a circuit diagram showing a second example of the pixelcircuit of a three-transistor configuration;

FIG. 17 is a timing chart showing a driving timing according to aconventional example;

FIG. 18 shows an example of the distribution of low channel pixels; and

FIG. 19 is a potential diagram of an amplifier transistor when a methodof driving a solid-state imaging device according to a conventionalexample is adopted.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will now be described below indetail with reference to the drawings.

FIG. 1 is a block diagram showing the overview of the configuration ofan X-Y address type solid-state imaging device typified by a MOS-typesolid-state imaging device. As can be seen from FIG. 1, the X-Y addresstype solid-state imaging device is configured in such a manner that,around a pixel section 12 in which a large number of unit pixels 11 arearranged two-dimensionally in a matrix, a vertical decoder 13, avertical driving circuit 14, a column circuit 15, a horizontal decoder16, a horizontal driving circuit 17, an output circuit 18, and a timinggeneration circuit (TG) 19 are arranged.

The vertical decoder 13 selects each pixel 11 of the pixel section 12 inunits of rows by scanning in a vertical direction (in a columndirection), and also selects the row for electronic shutter. Thevertical driving circuit 14 drives each pixel 11 of the row selected bythe vertical decoder 13. The column circuit 15, which is provided insuch a manner as to correspond to each vertical pixel column of thepixel section 12, receives the reset level and the signal level fromeach pixel 11 of the row selected by the vertical decoder 13, andcalculates the difference between these levels, thereby obtaining apixel signal for one line, and performs various kinds of signalprocessing, such as a process for removing fixed pattern noise of thepixel 11, and AD conversion.

The horizontal decoder 16 selects each of the column circuits 15 insequence by scanning in a horizontal direction (in a row direction). Thehorizontal driving circuit 17 reads a pixel signal for one line, whichis obtained at each of the column circuits 15, into a horizontal signalline 20 from the column circuit 15 selected in sequence by thehorizontal decoder 16. The output circuit 18 outputs the pixel signalsfor one line in the sequence in which these are read out to thehorizontal signal line 20. In this output circuit 18, AD conversion canalso be performed, and furthermore, there are cases in which variouskinds of signal processing, such as a signal amplification process, acolor-signal-related process, and a signal compression process, areperformed.

The timing generation circuit 19 generates a driving pulse required forthe operation of each section, such as the vertical decoder 13, thevertical driving circuit 14, the column circuit 15, the horizontaldecoder 16, and the horizontal driving circuit 17, and also generatesvarious kinds of driving pulses (the drain voltage DRN, the reset pulseRST, the transfer pulse TRF, etc.) (to be described later) used wheneach pixel 11 of the pixel section 12 is driven. That is, the timinggeneration circuit 19 functions as a driving means for driving eachpixel 11 of the pixel section 12.

FIG. 2 is a circuit diagram showing an example of a pixel circuit of theunit pixel 11. As can be seen from FIG. 2, the unit pixel 11 accordingto this example has a three-transistor pixel configuration having anoptoelectric transducer (here, photodiode) 21, a transfer transistor 22,an amplifier transistor 23, and a resetting transistor 24. The transfertransistor 22, the amplifier transistor 23, and the resetting transistor24 are each formed by a MOS transistor. As the resetting transistor 24,a depletion-type transistor is used.

In this pixel circuit, the source of the transfer transistor 22 isconnected to the cathode of the optoelectric transducer 21, the drainthereof is connected to an FD section 25, and the gate thereof isconnected to transfer wiring 26. The transfer transistor 22 transfersthe photoelectrons obtained by performing optoelectric conversion at theoptoelectric transducer 21 to the FD section 25. Here, the FD section 25is a diffusion layer having a parasitic capacitance. The gate of theamplifier transistor 23 is connected to the FD section 25, the drainthereof is connected to drain wiring (not shown), and the source thereofis connected to the vertical signal line 27, so that a signalcorresponding to the electrical potential of the FD section 25 (a resetlevel/a signal level) is output to the vertical signal line 27. Thesource of the resetting transistor 24 is connected to the FD section 25,the drain thereof is connected to the drain wiring in common with thedrain of the amplifier transistor 23, and the gate thereof is connectedto resetting wiring 28, so that the electrical potential of the FDsection 25 is controlled.

The drain wiring to which the drain of the amplifier transistor 23 andthe drain of the resetting transistor 24 are connected in common iscommonly wired to most of the pixels 11 of the pixel section 12. Then,the drain wiring extends in the column direction (in the verticaldirection) and is common at the end of the pixel section 12, or thedrain wiring is wiring in a lattice form in which an opening is providedin the optoelectric transducer 21. There may be some pixels, such asdummy pixels, in which the drain wiring is separate from that of theeffective pixels (pixels used for taking a picture). The drain voltageDRN is supplied to the drain wiring, the transfer pulse TRF is suppliedto the transfer wiring 26, and the reset pulse RST is supplied to theresetting wiring 28.

In the MOS-type solid-state imaging device in which the above-describedpixels 11 of the three-transistor configuration are arrangedtwo-dimensionally in a matrix and each pixel 11 is selected bycontrolling the voltages of the drain and the gate of the resettingtransistor 24, in order to solve the problem of a non-selection hotcarrier white point specific to a three-transistor type, driving methodsaccording to each of the embodiments described below are adopted. Thedriving methods according to each embodiment are realized under thetiming control by the timing generation circuit 19 that functions as adriving means for driving each pixel 11 of the pixel section 12. Thedriving methods according to each embodiment will be described belowspecifically.

First Embodiment

The feature of a first embodiment of the present invention is a methodof driving the solid-state imaging device in the configuration ofFIG. 1. FIG. 3 is a timing chart illustrating a method of driving thesolid-state imaging device according to the first embodiment of thepresent invention. FIG. 3 also shows a timing relationship among thedriving pulses, that is, the drain voltage DRN, the reset pulse RST, andthe transfer pulse TRF, of a selection row (assumed to be an n-th row)during a pixel reading period. In the timing chart of FIG. 3, a time t11indicates a timing at which a reset level is received, and a time t12indicates a timing at which a signal level is received.

In the non-selection row, the drain voltage DRN is supplied in common,but the reset pulse RST and the transfer pulse TRF are not supplied.Usually, if a pulse of a negative polarity (“L” level) is supplied tothe drain wiring at an “H” level, the FD sections 25 of all the rows arereset to an “L” level. That is, the FD sections 25 of all the rows arebackfilled. Here, the “L” level of the FD section 25 is determined bythe threshold value of the resetting transistor 24, and is notnecessarily 0 V. When the resetting transistor 24 is of a depletiontype, the “L” level is an electrical potential of 0.5 V, etc.

Next, when the reset pulse RST is supplied to the selection row, theresetting transistor 24 is turned on, causing the FD section 25 of theselection row to be placed at an “H” level. As a result, the level whenthe selection row is reset, that is, the reset level, is output to thevertical signal line 27 through the amplifier transistor 23. Here, the“H” level of the. FD section 25 is not a power-supply voltage, andbecomes an electrical potential lower than that, for example, apower-supply voltage of −0.5 V, due to an influence such as a thresholdoffset. This reset level is received at the column circuit 15 at thetiming of time t11.

Next, when the transfer pulse TRF is supplied to the selection row, thetransfer transistor 22 is turned on, causing photoelectrons to betransferred from the optoelectric transducer 21 to the FD section 25 ofthe selection row. Then, the level of the FD section 25 corresponding tothe photoelectrons, that is, the signal level, is output to the verticalsignal line 27 through the amplifier transistor 23. This signal level isreceived at the column circuit 15 at the timing of time t12.

The column circuit 15 calculates the difference between the reset leveland the signal level, which are received at each timing of times t11 andt12, and holds, with respect to the pixels for one line, the differenceas an actual signal level in which the noise components are removed,that is, the input signal level. Thereafter, as shown in FIG. 4, thedriving of the next row is performed after passing through a period Band a horizontal effective period in which the signals held in thevertical driving circuit 14 of each column are output in sequencethrough the horizontal signal line 20.

Here, the difference of the first embodiment from the above-describedconventional technology is that the backfilling operation is performedjust before the reading. Therefore, after the pixels are read, the FDsection 25 of the n-th row is not backfilled in the period B, thehorizontal effective period, and the period A of the next row.Therefore, in the periods A and B, the bias current flows to the n-throw as is. In the method of driving a three-transistor pixel accordingto a conventional example, since the bias current always flows to thelow channel pixel, which is determined for each column, when there are,for example, 1,000 rows in the pixel section 12, dark current for 1,000pixels is generated at the low channel pixels of each column.

In comparison, in the method of driving a solid-state imaging deviceaccording to this embodiment, dark current for one line for one pixel(in practice, for one pixel because of being in units of columns) isbrought about for each pixel when the pixel itself is selected. Thepotential of the amplifier transistor 23 of the n-th row in the case ofthe method of driving the solid-state imaging device according to thisembodiment is shown in FIG. 5. As can be seen from FIG. 5, since the FDsection 25 is not backfilled, the gate potential of the amplifiertransistor 23 is not at an “L” level. Therefore, the potentialdifference when the electrons of the bias current flow to the drainwiring is smaller than that in the case of the conventional technology.Therefore, hot carriers are not likely to occur. Since the probabilityof the occurrence of the hot carrier increases with the exponentialfunction of this potential difference, the dark current which causes hotcarriers to occur is decreased markedly because the potential differenceis small.

As described above, in the solid-state imaging device according to thefirst embodiment, as a result of causing the bias current supplied tothe vertical signal line 27 to flow to a pixel associated with theimmediately previous selection pixel, for example, the immediatelyprevious selection pixel itself, during the non-reading period ofpixels, dark current for one line (for one pixel) is brought about foreach pixel when the pixel itself is selected, and the dark currentitself for one line can be decreased markedly. Therefore, it is possibleto virtually eliminate defective pixels due to non-selection hot carrierwhite points.

In this embodiment, as a preferred example, a depletion-type transistoris used as the resetting transistor 24. However, when a depletion-typetransistor is not used, as shown in FIG. 6, the fact that the resetpulse RST needs only to be supplied to at least the previous row duringthe period in which the drain voltage DRN at an “L” level is suppliedcan be easily understood by a person skilled in the art.

Furthermore, if the reset pulse RST is supplied again to the selectionrow immediately after the reading of the signal level, the level of theFD section 25 of the selection row always becomes an “H” levelregardless of the amount of incidence light and becomes almost constantregardless of the pixel, which is desirable. Furthermore, it is clearthat, after the reception of the signal level, even if the selection rowis backfilled, instead, the FD section 25 may be placed at an “H” levelby providing the reset pulse RST to another row (for example, the nextrow) associated with the selection row, causing a bias current to flowto the other row.

Furthermore, there is a plural row reading configuration in whichsignals of a plurality of rows are collectively read. In that case, forexample, as shown in FIG. 7, the reading is performed in the sequence ofthe n-th row and the (n+1)th row. Here, the reading of the n-th row isin the sequence of “backfilling→reading”, and also, the reading of the(n+1)th row is in the sequence of “backfilling→reading”. Therefore,thereafter, in the periods B and A before the reading of the (n+2)throw, electrical current flows to the (n+1)th row, and similarly to theforegoing, the dark current which causes hot carriers to occur does notbecome a problem.

In the manner described above, the application to the configuration ofreading a plurality of rows can be easily understood from thedescription up to this point by a person skilled in the art. The sameapplies to the electronic shutter operation. There are variousvariations for the method of implementation including the electronicshutter, and these are also obvious to a person skilled in the art.

Second Embodiment

FIG. 8 is a block diagram showing the configuration of the main part ofa solid-state imaging device according to a second embodiment of thepresent invention. In the solid-state imaging device of this embodiment,in an area other than the effective pixel (pixel used to take a picture)area of the pixel section 12, a means for causing a bias currentsupplied to the vertical signal line 27 to flow to other than each pixel11 of the pixel section 12 during the non-reading period of pixels, forexample, a dummy pixel (dummy row for one line) 31 added to each of thevertical signal lines 27, is provided.

In FIG. 8, the dummy pixel 31 is formed by a single MOS transistor 32.The source of the MOS transistor 32 is connected to the vertical signalline 27, the gate thereof is connected to dummy wiring 33, and the drainthereof is connected to a power supply Vdd. In the solid-state imagingdevice according to the second embodiment in which the dummy pixel 31 isconnected to each of the vertical signal lines 27 in this manner, thedriving is performed in the following manner.

FIG. 9 is a timing chart illustrating a method of driving thesolid-state imaging device according to the second embodiment of thepresent invention. FIG. 9 also shows a timing relationship among thedriving pulses, that is, the drain voltage DRN, the reset pulse RST, thetransfer pulse TRF, and a dummy pulse DMY, of a selection row (assumedto be an n-th row) during a pixel reading period. Here, the dummy pulseDMY is a driving pulse provided to the dummy pixel 31, that is, the gateof the MOS transistor 32, via the dummy wiring 33.

In the timing chart of FIG. 9, the timing relationship among the drainvoltage DRN, the reset pulse RST, and the transfer pulse TRF isbasically the same as that of the case according to the conventionaltechnology (see FIG. 17). A time t21 indicates a timing at which a resetlevel is received, and a time t22 indicates a timing at which a signallevel is received. The second embodiment differs from the case of theconventional technology in that, in the period other than the readingperiod of the selection row, the dummy pixel 31 is turned on, and a biascurrent is made to flow to the dummy pixel 31.

More specifically, in the reading period of the selection row, whereasthe MOS transistor 32 of the dummy pixel 31 is turned off by causing thedummy pulse DMY to be placed at an “L” level, in the period other thanthe reading period of the selection row (the non-reading period), theMOS transistor 32 is turned on by causing the dummy pulse DMY to beplaced at an “H” level. As a result of the MOS transistor 32 becomingon, in the non-reading period, the bias current which is supplied from abias-current source 34 is made to flow to the power supply Vdd throughthe dummy pixel 31.

As described above, in the solid-state imaging device according to thesecond embodiment, a means for causing the bias current supplied to thevertical signal line 27 to flow to other than each pixel 11 of the pixelsection 12 during the non-reading period of pixels, for example, thedummy pixel 31 added to each of the vertical signal lines 27, isprovided in an area other than the effective pixel area of the pixelsection 12. As a result, the bias current does not flow to each pixel 11of the pixel section 12, in particular, the low channel pixels, and theoccurrence of the non-selection hot carrier white points is concentratedon the dummy pixel 31. Therefore, defective pixels due to non-selectionhot carrier white points for the effective pixels can be virtuallyeliminated.

In this embodiment, the dummy pixel 31 is formed by a single MOStransistor 32. Alternatively, the dummy pixel 31 may be configured thesame as the pixel 11 of the effective pixel area, that is, formed to bea three-transistor pixel configuration, so that, when reading is notperformed in any row, the dummy pixel is selected, and the bias currentis made to flow thereto. Thus, it is possible to virtually eliminatedefective pixels due to non-selection hot carrier white points.

As a result of configuring the dummy pixel 31 the same as the pixel 11of the effective pixel area, there is the advantage in that the dummypixel 31 can be produced by the same process as that for the pixel 11.However, configuring the dummy pixel 31 by a single MOS transistor makesit possible to form the dummy pixel 31 very finely. Therefore, whencompared to the case in which the dummy pixel 31 is configured to be thesame as the pixel 11, there is the advantage in that defective pixelsdue to non-selection hot carrier white points can be eliminated withoutexpanding the area of the pixel section 12.

Third Embodiment

FIG. 10 is a block diagram showing the configuration of the main part ofa solid-state imaging device according to a third embodiment of thepresent invention. In the solid-state imaging device according to thisembodiment, a means for shutting off the supply of the bias currentduring a non-reading period of pixels, for example, a switching element35, is provided in series to the bias-current source 34.

In FIG. 10, the bias-current source 34 (the same as the bias-currentsource 34 of FIG. 8) is formed by a load MOS transistor 37 whose sourceis grounded and whose gate is connected to load wiring 36. The load MOStransistor 37 determines the current value of the bias current which ismade to flow to the vertical signal line 27 as a result of a voltage ofapproximately 1 V being supplied through the load wiring 36.

The switching element 35 for shutting off the supply of the bias currentis formed by a MOS transistor 39, for example, whose source is connectedto the drain of the load MOS transistor 37, whose drain is connected tothe vertical signal line 27, and whose gate is connected to switchingwiring 38, the-switching element 35 being connected in series to thebias-current source 34. The channel width W of the MOS transistor 39 isset in such a degree so as to be satisfactorily capable of performing aswitching operation as a result of the gate potential swinging between 0V and the power-supply voltage.

FIG. 11 is a timing chart illustrating a method of driving thesolid-state imaging device according to the third embodiment. FIG. 11also shows a timing relationship among the driving pulses, that is, thedrain voltage DRN, the reset pulse RST, the transfer pulse TRF, and aswitching pulse LSW, of a selection row (assumed to be an n-th row)during a pixel reading period. Here, the switching pulse LSW is adriving pulse provided to the switching element 35, that is, the gate ofthe MOS transistor 39, through the switching wiring 38.

In the timing chart of FIG. 11, the timing relationship among the drainvoltage DRN, the reset pulse RST, and the transfer pulse TRF isbasically the same as the case according to the conventional technology(see FIG. 17). A time t31 indicates a timing at which a reset level isreceived, and a time t32 indicates a timing at which a signal level isreceived. The switching element 35 is turned on (closed) only during thereading period of the selection row in order to cause a bias current tobe supplied to the vertical signal line 27, and in the period other thanthe reading period of the selection row (non-reading period), theswitching element 35 is turned off (open) to shut off the supply of thebias current. As a result, the periods A and B in FIG. 4 are eliminatedor made sufficiently short.

As described above, in the solid-state imaging device according to thethird embodiment, a means for shutting off the supply of the biascurrent to the vertical signal line 27 during the non-reading period ofpixels is provided to cut the bias current before and after the reading.As a result, since the bias current, which causes a non-selection hotcarrier white point to occur, does not flow to the low channel pixel,defective pixels due to non-selection hot carrier white points can bevirtually eliminated.

In this embodiment, as the means for shutting off the supply of the biascurrent, the MOS transistor 39 connected between the load MOS transistor37 and the vertical signal line 27 is used. In addition, the load MOStransistor 37 itself can also be used as that means. That is, the supplyof the bias current can be shut off by causing the gate voltage of theload MOS transistor 37 to become 0 V and causing the load MOS transistor37 to be turned off during the non-reading period of pixels. As a resultof also using the load MOS transistor 37 as a means for shutting off thesupply of the bias current, there is the advantage in that the number ofelements can be reduced when compared to the case in which that means isprovided in a dedicated manner. However, when this technique is adopted,an operation speed of such a degree as to be capable of ensuring thetime required for the bias current to be stabilized when the supply ofthe bias current is started is required.

Fourth Embodiment

The feature of a fourth embodiment of the present invention is a methodof driving the solid-state imaging device in the pixel configuration ofFIG. 2. FIG. 12 is a timing chart illustrating the method of driving thesolid-state imaging device according to the fourth embodiment. FIG. 12also shows a timing relationship among the driving pulses, that is, thedrain voltage DRN, the reset pulse RST, and the transfer pulse TRF, of aselection row (assumed to be an n-th row) during a pixel reading period.In the timing chart of FIG. 12, a time t41 indicates a timing at which areset level is received, and a time t42 indicates a timing at which asignal level is received.

As can be seen from the timing chart of FIG. 12, in the method ofdriving the solid-state imaging device according to this embodiment, thedrain voltage DRN of the resetting transistor 24 is placed at an “H”level (=the power-supply voltage) only in the reading period, and forthe period other than that, the drain voltage is placed at anintermediate voltage (a voltage between the power-supply voltage leveland the ground level), which is close to 0 V. The reason why the drainvoltage DRN is placed at an intermediate voltage is for the purpose ofpreventing electrons to leak from the drain wiring to the optoelectrictransducer 21. Furthermore, as an intermediate voltage close to 0 V, avoltage value of approximately 0.2 to 0.7 V is preferable. At this time,in both periods A and B of FIG. 4, the drain voltage DRN is not at an“H” level, or since the time of the “H” level is sufficiently short, theoccurrence of hot carriers is suppressed, and the dark current becomessufficiently small.

As described above, in the solid-state imaging device according to thefourth embodiment, as a result of causing the drain voltage DRN of theresetting transistor 24 to be an intermediate voltage, preferably, 0.2to 0.7 V, during the non-reading period of pixels, the occurrence of hotcarriers can be suppressed, and the dark current can be reducedsufficiently. Therefore, defective pixels due to non-selection hotcarrier white points can be virtually eliminated.

Fifth Embodiment

In a fifth embodiment of the present invention, the feature is a methodof driving a solid-state imaging device in the pixel configuration ofFIG. 2. FIG. 13 is a timing chart illustrating a method of driving thesolid-state imaging device according to the fifth embodiment. FIG. 13also shows a timing relationship among the driving pulses, that is, thedrain voltage DRN, the reset pulse RST, and the transfer pulse TRF, of aselection row (assumed to be an n-th row) during a pixel reading period.

In the timing chart of FIG. 13, the timing relationship among the drainvoltage DRN, the reset pulse RST, and the transfer pulse TRF isbasically the same as that of a case according to the conventionaltechnology (see FIG. 17). A time t51 indicates a timing at which a resetlevel is received, and a time t52 indicates a timing at which a signallevel is received.

Furthermore, in the method of driving the solid-state imaging deviceaccording to this embodiment, as a result of setting the voltage valueon the “H” level side of the reset pulse RST to be higher than thevoltage value (=the voltage of the power-supply voltage) on the “H”level side of the drain voltage DRN, the operation margin is ensuredwithout lowering the threshold values of the amplifier transistor 23 andthe resetting transistor 24, and the electrical current during thenon-selection period is reliably shut off. In this case, since theelectrical current is shut off for all the pixels, the electricalpotential of the vertical signal line 27 is a voltage, such as 0 V, atwhich the bias-current source 34 (see FIG. 8) does not cause a biascurrent to flow.

If each of the threshold values of the amplifier transistor 23 and theresetting transistor 24 is higher than or equal to 0.2 V, preferably,approximately 0.4 to 0.5 V, the electrical current can be shut off.Furthermore, when the voltage value on the “H” level side of the resetpulse RST is set to be higher than the voltage value on the “H” levelside of the drain voltage DRN, inside the solid-state imaging device,the voltage may be generated by stepping up the voltage value of thepower-supply voltage by using a stepping-up circuit or the voltage maybe supplied externally.

As described above, in the solid-state imaging device according to thefifth embodiment, as a result of setting the threshold values of theamplifier transistor 23 and the resetting transistor 24 to be higherthan or equal to 0.2 V and setting the voltage value on the “H” levelside of the reset pulse RST to be higher than the voltage value on the“H” level side of the drain voltage DRN, the electrical current duringthe non-selection time is reliably shut off, and the bias current doesnot flow to the vertical signal line 27. As a result, defective pixelsdue to non-selection hot carrier white points can be virtuallyeliminated.

The embodiments have been discussed above by using as an example a casein which the driving method is applied to the pixel configuration shownin FIG. 2, that is, pixels of the configuration in which the drain sideof the amplifier transistor and the drain side of the resettingtransistor are connected in common to the drain wiring. However, thedriving method is not restricted to this example, and can also beapplied to a pixel configuration shown in FIG. 15, that is, pixels ofthe configuration in which the drain side of the amplifier transistor isconnected to the power-supply wiring and the drain side of the resettingtransistor is connected to the drain wiring.

That is, also, in this type of pixel, in the driving by the drivingmethod according to the conventional technology (the driving methodbased on the timing chart of FIG. 17), non-selection hot carrier whitepoints occur for the same reasons as those in the case of pixels of theconfiguration in which the drain sides of the amplifier transistor andthe resetting transistor are connected in common to the drain wiring. Byapplying the driving method according to each of the above-describedembodiments, the occurrence of non-selection hot carrier white pointscan be suppressed.

The size of the pixel of the type in which the drain side of theamplifier transistor is connected to the power-supply wiring and thedrain side of the resetting transistor is connected to the drain wiringis greater than that of the configuration shown in FIG. 2. However,since there is no need to drive the wiring over the entire surface ofthe pixel section, this is advantageous from the viewpoint of increasingthe number of pixels. Also, when the driving method is applied to thispixel, driving can be performed by the same driving method as thedriving method according to each of the above-described embodiments.That is, the same pulse voltage as the drain voltage DRN in the pixel ofFIG. 2 may be supplied to the drain wiring which is connected to onlythe resetting transistor and which extends in the row direction.However, it is only for the selection row that the drain voltage issupplied to the drain wiring.

FIG. 14 is a block diagram showing the overview of the configuration ofa camera apparatus (image-capturing apparatus) according to the presentinvention. As can be seen from FIG. 14, the camera apparatus includes animage-capturing device 41; an optical system for guiding incidence lightinto the pixel area of the image-capturing device 41, for example, alens 42 for forming incidence light (image light) into an image on theimage-capturing plane; a camera IC 43 for controlling theimage-capturing device 41 and for processing a signal from theimage-capturing device 41; and others.

In this camera apparatus, as the image-capturing device 41, thesolid-state imaging device according to the first to fifth embodiments,that is, the MOS-type solid-state imaging device of a three-transistorconfiguration in which the unit pixel 11 has, in addition to theoptoelectric transducer (for example, photodiode) 21, the transfertransistor 22, the amplifier transistor 23, and the resetting transistor24, is used.

The camera IC 43 communicates with the image-capturing device 41 andcontrols the image-capturing device 41. For example, the control of theelectronic shutter and the control of the reading mode are performed.Furthermore, the camera IC 43 processes signals from the image-capturingdevice 41. For example, color-related processing such as white balance,and the compression of signals are performed. In this example, a framememory and a ROM used for image processing are contained in the cameraIC 43. Alternatively, these may be formed as other chips.

As described above, according to this camera apparatus, as a result ofusing the MOS-type solid-state imaging device according to the first tofifth embodiments as the image-capturing device 41 and the camera IC(driving circuit_ 43 for driving the image-capturing device, in theMOS-type solid-state imaging device, defective pixels due tonon-selection hot carrier white points can be virtually eliminated.Therefore, it is possible to obtain a captured image with a high imagequality.

The camera apparatus of the above-described configuration according tothe present invention may be used as a camera module incorporated inelectrical devices, such as portable phones and PCs (PersonalComputers).

1. A solid-state imaging device comprising: a pixel section formed insuch a manner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged; and driving means for selectingeach pixel of said pixel section by controlling the voltages of thedrain and the gate of said resetting transistor and for causing a biascurrent supplied to said signal line to flow to a pixel associated withan immediately previous selection pixel during a non-reading period ofpixels.
 2. A solid-state imaging device according to claim 1, whereinsaid pixel associated with the immediately previous selection pixel isthe immediately previous selection pixel itself.
 3. A solid-stateimaging device according to claim 1, wherein, during the non-readingperiod of pixels, when the drain voltage of said resetting transistor isto be brought into a high level, said driving means causes the floatingdiffusion section of said pixel to be brought into a low levelimmediately before the signal of the selection-pixel is read, and doesnot return the floating diffusion section of the read pixel to a lowlevel immediately after the reading.
 4. A solid-state imaging deviceaccording to claim 3, wherein said driving means causes the floatingdiffusion section of the pixel associated with the read pixel to bebrought into a high level immediately after the reading.
 5. Asolid-state imaging device according to claim 4, wherein the pixelassociated with said read pixel is the read pixel itself.
 6. Asolid-state imaging device comprising: a pixel section formed in such amanner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged; driving means for selecting eachpixel of said pixel section by controlling the voltages of the drain andthe gate of said resetting transistor; and means for causing a biascurrent supplied to said signal line to flow to other than each pixel ofsaid pixel section during the non-reading period of pixels.
 7. Asolid-state imaging device according to claim 6, wherein said means forcausing the bias current to flow to other than each pixel is a dummypixel provided in an area other than the effective pixel area of saidpixel section.
 8. A solid-state imaging device according to claim 7,wherein said dummy pixel is connected between said signal line and apower supply, and comprises a single transistor which is turned onduring the non-reading period of pixels.
 9. A solid-state imaging deviceaccording to claim 7, wherein said dummy pixel has the sameconfiguration as that of each pixel of said pixel section.
 10. Asolid-state imaging device comprising: a pixel section formed in such amanner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged; a bias current source forsupplying a bias current to each pixel through said signal line; drivingmeans for selecting each pixel of said pixel section by controlling thevoltages of the drain and the gate of said resetting transistor; andmeans for shutting off the supply of said bias current to said signalline during the non-reading period of pixels.
 11. A solid-state imagingdevice according to claim 10, wherein said shutting-off means is aswitching element which is connected in series to said bias currentsource and which is turned off during the non-reading period of pixels.12. A solid-state imaging device according to claim 10, wherein saidbias current source and said shutting-off means comprise a transistorfor determining said bias current, and the transistor is turned offduring the non-reading period of pixels.
 13. A solid-state imagingdevice comprising: a pixel section formed in such a manner that a unitpixel having three transistors of a transfer transistor for transferringa signal of an optoelectric transducer to a floating diffusion section,an amplifier transistor for outputting a signal of said floatingdiffusion section to a signal line, and a resetting transistor forresetting said amplifier transistor and said floating diffusion sectionis arranged; and driving means for selecting each pixel of said pixelsection by controlling the voltages of the drain and the gate of saidresetting transistor and for making the drain voltage of said resettingtransistor to be an intermediate voltage between the power-supplyvoltage level and the ground level during the non-reading period ofpixels.
 14. A solid-state imaging device according to claim 13, whereinsaid intermediate voltage is approximately 0.2 to 0.7 V.
 15. Asolid-state imaging device comprising: a pixel section formed in such amanner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged; and driving means for selectingeach pixel of said pixel section by controlling the voltages of thedrain and the gate of said resetting transistor and for providing aresetting pulse whose voltage value on the high level side is higherthan the voltage value of the power-supply voltage, to the gate of saidresetting transistor.
 16. A solid-state imaging device according toclaim 15, wherein each threshold value of said amplifier transistor andsaid resetting transistor is 0.2 V.
 17. -A method for driving asolid-state imaging device comprising a pixel section formed in such amanner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged, said driving method comprisingthe steps of: selecting each pixel of said pixel section by controllingthe voltages of the drain and the gate of said resetting transistor; andcausing a bias current supplied to said signal line to flow to a pixelassociated with an immediately previous selection pixel during anon-reading period of pixels.
 18. A method of driving a solid-stateimaging device according to claim 17, wherein said pixel associated withthe immediately previous selection pixel is the immediately previousselection pixel itself.
 19. A method of driving a solid-state imagingdevice according to claim 17, wherein the floating diffusion section ofsaid pixel is brought into a low level immediately before the signal ofthe selection pixel is read, and the floating diffusion section of theread pixel is not returned to a low level immediately after the reading.20. A method of driving a solid-state imaging device according to claim17, wherein the floating diffusion section of said pixel is brought intoa low level immediately before the signal of the selection pixel isread, and the floating diffusion section of the pixel associated withthe read pixel is brought into a high level immediately after thereading.
 21. A method of driving a solid-state imaging device accordingto claim 20, wherein said pixel associated with a read pixel is the readpixel itself.
 22. A method of driving a solid-state imaging devicecomprising a pixel section formed in such a manner that a unit pixelhaving three transistors of a transfer transistor for transferring asignal of an optoelectric transducer to a floating diffusion section, anamplifier transistor for outputting a signal of said floating diffusionsection to a signal line, and a resetting transistor for resetting saidamplifier transistor and said floating diffusion section is arranged,said driving method comprising the steps of: selecting each pixel ofsaid pixel section by controlling the voltages of the drain and the gateof said resetting transistor; and causing a bias current supplied tosaid signal line to flow to other than each pixel of said pixel sectionduring the non-reading period of pixels.
 23. A method of driving asolid-state imaging device comprising a pixel section formed in such amanner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged, said driving method comprisingthe steps of: selecting each pixel of said pixel section by controllingthe voltages of the drain and the gate of said resetting transistor; andstopping the supply of a bias current to said signal line during thenon-reading period of pixels.
 24. A method of driving a solid-stateimaging device comprising a pixel section formed in such a manner that aunit pixel having three transistors of a transfer transistor fortransferring a signal of an optoelectric transducer to a floatingdiffusion section, an amplifier transistor for outputting a signal ofsaid floating diffusion section to a signal line, and a resettingtransistor for resetting said amplifier transistor and said floatingdiffusion section is arranged, said driving method comprising the stepsof: selecting each pixel of said pixel section by controlling thevoltages of the drain and the gate of said resetting transistor; andcausing the drain voltage of said resetting transistor to be anintermediate voltage between the power-supply voltage level and theground level during the non-reading period of pixels.
 25. A method ofdriving a solid-state imaging device according to claim 24, wherein saidintermediate voltage is approximately 0.2 to 0.7 V.
 26. A method ofdriving a solid-state imaging device comprising a pixel section formedin such a manner that a unit pixel having three transistors of atransfer transistor for transferring a signal of an optoelectrictransducer to a floating diffusion section, an amplifier transistor foroutputting a signal of said floating diffusion section to a signal line,and a resetting transistor for resetting said amplifier transistor andsaid floating diffusion section is arranged, said driving methodcomprising the steps of: selecting each pixel of said pixel section bycontrolling the voltages of the drain and the gate of said resettingtransistor; and providing a resetting pulse whose voltage value on thehigh level side is higher than the voltage value of the power-supplyvoltage, to the gate of said resetting transistor.
 27. A method ofdriving a solid-state imaging device according to claim 26, wherein eachthreshold value of said amplifier transistor and said resettingtransistor is 0.2 V or higher.
 28. A camera apparatus comprising: asolid-state imaging device having a pixel section formed in such amanner that a unit pixel having three transistors of a transfertransistor for transferring a signal of an optoelectric transducer to afloating diffusion section, an amplifier transistor for outputting asignal of said floating diffusion section to a signal line, and aresetting transistor for resetting said amplifier transistor and saidfloating diffusion section is arranged; an optical system for guidingincident light into said pixel section of said solid-state imagingdevice; and driving means for selecting each pixel of said pixel sectionby controlling the voltages of the drain and the gate of said resettingtransistor and for causing a bias current supplied to said signal lineto flow to a pixel associated with an immediately previous selectionpixel during a non-reading period of pixels.
 29. A camera apparatuscomprising: a solid-state imaging device comprising a pixel sectionformed in such a manner that a unit pixel having three transistors of atransfer transistor for transferring a signal of an optoelectrictransducer to a floating diffusion section, an amplifier transistor foroutputting a signal of said floating diffusion section to a signal line,and a resetting transistor for resetting said amplifier transistor andsaid floating diffusion section is arranged, and means for causing abias current supplied to said signal line to flow to other than eachpixel of said pixel section during a non-reading period of pixels; anoptical system for guiding incident light into said pixel section ofsaid solid-state imaging device; and driving means for selecting eachpixel of said pixel section by controlling the voltages of the drain andthe gate of said resetting transistor.
 30. A camera apparatuscomprising: a solid-state imaging device comprising a pixel sectionformed in such a manner that a unit pixel having three transistors of atransfer transistor for transferring a signal of an optoelectrictransducer to a floating diffusion section, an amplifier transistor foroutputting a signal of said floating diffusion section to a signal line,and a resetting transistor for resetting said amplifier transistor andsaid floating diffusion section is arranged, a bias current source forsupplying a bias current to each pixel through said signal line, andmeans for shutting off the supply of said bias current to said signalline during a non-reading period of pixels; an optical system forguiding incident light into said pixel section of said solid-stateimaging device; and driving means for selecting each pixel of said pixelsection by controlling the voltages of the drain and the gate of saidresetting transistor.
 31. A camera apparatus comprising: a solid-stateimaging device comprising a pixel section formed in such a manner that aunit pixel having three transistors of a transfer transistor fortransferring a signal of an optoelectric transducer to a floatingdiffusion section, an amplifier transistor for outputting a signal ofsaid floating diffusion section to a signal line, and a resettingtransistor for resetting said amplifier transistor and said floatingdiffusion section is arranged; an optical system for guiding incidentlight into said pixel section of said solid-state imaging device; anddriving means for selecting each pixel of said pixel section bycontrolling the voltages of the drain and the gate of said resettingtransistor and for causing the drain voltage of said resettingtransistor to be an intermediate voltage between the power-supplyvoltage level and the ground level during the non-reading period ofpixels.
 32. A camera apparatus comprising a solid-state imaging devicecomprising a pixel section formed in such a manner that a unit pixelhaving three transistors of a transfer transistor for transferring asignal of an optoelectric transducer to a floating diffusion section, anamplifier transistor for outputting a signal of said floating diffusionsection to a signal line, and a resetting transistor for resetting saidamplifier transistor and said floating diffusion section is arranged; anoptical system for guiding incident light into said pixel section ofsaid solid-state imaging device; and driving means for selecting eachpixel of said pixel section by controlling the voltages of the drain andthe gate of-said resetting transistor and for providing a resettingpulse whose voltage value on the high level side is higher than thevoltage value of the power-supply voltage, to the gate of said resettingtransistor during a reset time.
 33. A solid-state imaging devicecomprising: a plurality of pixels arranged within an imaging area,wherein said pixels comprise an optoelectric transducer, an amplifiertransistor, to whose gate a charge signal from said optoelectrictransducer is supplied, and a resetting transistor for resetting thecharge from said optoelectric transducer, in a reading period, after thegate potential of said amplifier transistor is changed to apredetermined level, said amplifier transistor amplifies and outputs thecharge signal from said optoelectric transducer, and in the readingperiod and in the non-reading period immediately thereafter, the gate ofsaid amplifier transistor is not subjected to electrical potentialadjustment.
 34. A solid-state imaging device comprising: a plurality ofpixels arranged within an imaging area, wherein said pixels comprise anoptoelectric transducer, an amplifier transistor, to whose gate a chargesignal from said optoelectric transducer is supplied, and a resettingtransistor for resetting the charge from said optoelectric transducer,in a reading period, after the gate potential of said amplifiertransistor is changed to a predetermined level, said amplifiertransistor amplifies and outputs the charge signal from saidoptoelectric transducer, and in the reading period and in thenon-reading period immediately thereafter, the gate of said amplifiertransistor is returned to said predetermined electrical potential.
 35. Asolid-state imaging device comprising: a plurality of pixels arrangedwithin an imaging area; a signal line for guiding a signal from saidpixel to outside said imaging area; an electrical current source forsupplying a bias current to said signal line; and switching means forchanging the flow of said bias current.
 36. A solid-state imaging deviceaccording to claim 35, wherein said switching means is a dummy pixelsection associated with said signal line.
 37. A solid-state imagingdevice according to claim 35, wherein said switching means is aswitching section for shutting off a bias current, said switchingsection being formed separately from said electrical current source.